2SC3356
Да, вполне.
http://www.ortodoxism.ro/datasheets/nec/2SC3356.pdf
---
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
---
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 C
Storage Temperature Tstg 65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0
DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product fT 7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain S21e2 11.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
---